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TESLA200 Data Sheet
Designed specifically for IGBT/power MOSFET (GaN, SiC, Si) device measurements at the wafer level, the new TESLA200 on-wafer power semiconductor probing system is engineered to provide accurate data up to 3,000 V (triaxial) / 10,000 V (coaxial) and 200 A (standard) / 600 A (high current). With nextgeneration test capabilities, anti-arcing solutions, wafer automation, and support for both engineering probes and production probe cards, the TESLA200 now enables complete thermal testing (-55ºC to 300ºC) with fully-automatic thin / TAIKO wafer loading. One system covers all on-wafer high power test needs, from R&D to niche production.
Created: May 25, 2018 | Updated: August 22, 2022 | Type: pdf | Size: 1.01 MB