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Making Accurate and Consistent Wafer Measurements with Next Generation Guarded True-Kelvin MEMS DC Probes

Gate length down-scaling of silicon-based transistor results in very small on-state drain-source resistance, making it challenging for test engineers to perform precise and repeatable wafer measurements. Size reduction of aluminum capped copper test pads to save on lithography, prototyping and production costs implies that it is very difficult to re-probe the same device with low contact resistance. Novel true-Kelvin MEMS analytical DC probes, new test and modelling strategies are proposed in this paper to address these emerging test challenges.

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